Vishay Intertechnology, Inc. (NYSE: VSH) has launched 16 new silicon carbide (SiC) Schottky diodes with voltage ratings of 650 V and 1200 V, packaged in the industry-standard SOT-227. These new devices are designed to deliver high speed and efficiency for high-frequency applications, offering an optimal balance between capacitive charge (QC) and forward voltage drop.
The new product line features dual-diode components rated from 40 A to 240 A in a parallel configuration, as well as single-phase bridge devices rated at 50 A and 90 A. Utilizing advanced thin wafer technology, these diodes achieve a low forward voltage drop as low as 1.36 V, significantly reducing conduction losses and enhancing overall efficiency. Additionally, they exhibit superior reverse recovery parameters compared to traditional Si-based diodes, with virtually no recovery tail.
Typical applications for these components include AC/DC power factor correction (PFC) and DC/DC ultra-high frequency output rectification in food-based power supplies (FBPS) and LLC converters for photovoltaic systems, charging stations, industrial uninterruptible power supplies (UPS), and telecom power supplies. The diodes’ low QC, down to 56 nC, enables high-speed switching, while their industry-standard package allows for easy drop-in replacement of competing solutions.
These diodes are capable of high-temperature operation up to +175 °C and feature a positive temperature coefficient for straightforward paralleling. Approved by UL under file E78996, the devices boast a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
