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Infineon Technologies IRLML6401TRPBF
Fabricant:
Infineon Technologies
No de pièce du fabricant:
IRLML6401TRPBF
Paquet:
SOT-23-3
RoHS:
Fiche technique:
IRLML6401TRPBF
Description:
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
ECAD Model:
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Attribut de produit
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Manufacturer
Infineon
Product Category
MOSFET
RoHS
Rds On - Drain-Source Resistance
50 mOhms
Mounting Style
SMD/SMT
Pd - Power Dissipation
1.3 W
Product Type
MOSFET
Number Of Channels
1 Channel
Package / Case
SOT-23-3
Length
2.9 mm
Width
1.3 mm
Height
1.1 mm
Packaging
Cut Tape or Reel
Part # Aliases
SP001577044
Brand
Infineon Technologies
Configuration
Single
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Vgs - Gate-Source Voltage
8 V
Qg - Gate Charge
10 nC
Technology
Si
Id - Continuous Drain Current
4.3 A
Vds - Drain-Source Breakdown Voltage
12 V
Factory Pack Quantity
3000
Subcategory
MOSFETs
Unit Weight
0.049384 oz
en Stock: 6009 expédier sous 1 jour
ACHETER
CITATION
Total
$0.74016
Livraison et traitement gratuits sur les commandes $299+. (Dans 2kg)
Quantité
Prix unitaire
1+
$0.74016
10+
$0.62328
30+
$0.56484
100+
$0.52152
500+
$0.47832
1000+
$0.45660
Manufacturer,Drain-source breakdown voltage,FET类型,工作温度(Tj),Type of installation,功率(Max),漏极电流Id(连续)(Max),search for,Package,On Resistance - Max,Drain current,连续漏极电流Id@25℃,FET configuration,Channel Type,High Side Voltage - Max (Bootstrap),Current - Peak Output (Source, Sink),Logic Voltage - VIL, VIH,Gate Type,Features,Driven Configuration,Current - Continuous Drain (Id) @ 25°C,Continuous Drain Current (Id) @ 25°C,漏极电流Idss,品牌,原产国家,引线数量,不同 Id,Vgs时的 RdsOn(最大值),零件状态,是否无铅,存储温度,元件生命周期,漏源极电压(Vdss),Power Dissipation-Max (Ta=25°C),Package/Temperature,Pt,VCES,VCE(sat)(Typ.),IC(Max.)(A),导通电阻Rds On(Max),漏源电压(Vdss),输入电容(Ciss)(Max),栅极电荷(Qg)(Max),Operating Supply Voltage,Number of Drivers,Maximum DC Collector Current,Input Type,Collector-Emitter Breakdown Voltage,,Product Category,Shipping Restrictions,Type,Product,Forward Transconductance - Min,Rds On - Drain-Source Resistance,Rise Time,Fall Time,Pd - Power Dissipation,Compliance,Product Type,Number of Channels,Termination Style,Package / Case,Minimum Operating Temperature,Moisture Sensitive,Series,Part # Aliases,Transistor Polarity,Transistor Type,Vgs - Gate-Source Voltage,Vgs th - Gate-Source Threshold Voltage,Qg - Gate Charge,Technology,Id - Continuous Drain Current,Vds - Drain-Source Breakdown Voltage,Typical Turn-Off Delay Time,Typical Turn-On Delay Time,Subcategory,Unit Weight,Tradename,
Infineon,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,MOSFET,,,,,50 mOhms,,,1.3 W,,MOSFET,1 Channel,,SOT-23-3,,,,SP001577044,P-Channel,1 P-Channel,8 V,,10 nC,Si,4.3 A,12 V,,,MOSFETs,0.049384 oz,,
726085
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=726085&N=
$
1
0.74016
10
0.62328
30
0.56484
100
0.52152
500
0.47832
1000
0.45660