Spécifications techniques du produit
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| Attribut de produit | Valeur d'attribut | Recherche similaire | |
|---|---|---|---|
| Manufacturer | Infineon |
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| Product Category | MOSFET |
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| RoHS | |||
| Rds On - Drain-Source Resistance | 350 mOhms |
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| Rise Time | 5 ns |
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| Fall Time | 5 ns |
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| Mounting Style | Through Hole | ||
| Pd - Power Dissipation | 83 W |
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| Product Type | MOSFET |
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| Number Of Channels | 1 Channel |
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| Package / Case | TO-220-3 |
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| Length | 10 mm | ||
| Width | 4.4 mm | ||
| Height | 15.65 mm | ||
| Minimum Operating Temperature | - 55 C |
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| Maximum Operating Temperature | + 150 C | ||
| Channel Mode | Enhancement | ||
| Series | CoolMOS CE |
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| Packaging | Tube | ||
| Part # Aliases | IPP60R385CPXKSA1 IPP6R385CPXK SP000082281 |
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| Brand | Infineon Technologies | ||
| Configuration | Single | ||
| Transistor Polarity | N-Channel |
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| Transistor Type | 1 N-Channel |
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| Vgs - Gate-Source Voltage | 20 V |
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| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
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| Qg - Gate Charge | 22 nC |
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| Technology | Si |
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| Id - Continuous Drain Current | 9 A |
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| Vds - Drain-Source Breakdown Voltage | 600 V |
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| Typical Turn-Off Delay Time | 40 ns |
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| Typical Turn-On Delay Time | 10 ns |
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| Subcategory | MOSFETs |
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| Unit Weight | 0.211644 oz |
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| Tradename | CoolMOS |
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