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| Attribut de produit | Valeur d'attribut | Recherche similaire | |
|---|---|---|---|
| Manufacturer | IXYS |
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| Product Category | MOSFET |
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|
| RoHS | |||
| Type | Polar HiPerFET Power MOSFET |
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| Forward Transconductance - Min | 60 S |
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| Rds On - Drain-Source Resistance | 8 mOhms |
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| Rise Time | 35 ns |
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| Fall Time | 90 ns |
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| Mounting Style | Through Hole | ||
| Pd - Power Dissipation | 300 W |
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| Product Type | MOSFET |
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| Number Of Channels | 1 Channel |
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| Package / Case | TO-247-3 |
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| Length | 16.13 mm | ||
| Width | 5.21 mm | ||
| Height | 21.34 mm | ||
| Minimum Operating Temperature | - 55 C |
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| Maximum Operating Temperature | + 175 C | ||
| Channel Mode | Enhancement | ||
| Series | IXTR200N10 |
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| Packaging | Tube | ||
| Brand | IXYS | ||
| Configuration | Single | ||
| Transistor Polarity | N-Channel |
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| Transistor Type | 1 N-Channel |
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| Vgs - Gate-Source Voltage | 20 V |
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| Vgs Th - Gate-Source Threshold Voltage | 5 V |
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| Qg - Gate Charge | 235 nC |
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| Technology | Si |
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| Id - Continuous Drain Current | 120 A |
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| Vds - Drain-Source Breakdown Voltage | 100 V |
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| Typical Turn-Off Delay Time | 150 ns |
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| Typical Turn-On Delay Time | 30 ns |
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| Subcategory | MOSFETs |
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| Unit Weight | 0.186952 oz |
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| Tradename | Polar |
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