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| Attribut de produit | Valeur d'attribut | Recherche similaire | |
|---|---|---|---|
| Manufacturer | IXYS |
|
|
| Product Category | MOSFET |
|
|
| RoHS | |||
| Forward Transconductance - Min | 75 S |
|
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| Rds On - Drain-Source Resistance | 11 mOhms |
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| Rise Time | 16 ns |
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| Fall Time | 18 ns |
|
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| Mounting Style | Through Hole | ||
| Pd - Power Dissipation | 480 W |
|
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| Product Type | MOSFET |
|
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| Number Of Channels | 1 Channel |
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| Package / Case | TO-220-3 |
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| Minimum Operating Temperature | - 55 C |
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| Maximum Operating Temperature | + 175 C | ||
| Channel Mode | Enhancement | ||
| Series | IXFP110N15 |
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| Packaging | Tube | ||
| Brand | IXYS | ||
| Configuration | Single | ||
| Transistor Polarity | N-Channel |
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| Transistor Type | 1 N-Channel |
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| Vgs - Gate-Source Voltage | 20 V |
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| Vgs Th - Gate-Source Threshold Voltage | 4.5 V |
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| Qg - Gate Charge | 150 nC |
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| Technology | Si |
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| Id - Continuous Drain Current | 110 A |
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| Vds - Drain-Source Breakdown Voltage | 150 V |
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| Typical Turn-Off Delay Time | 33 ns |
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| Typical Turn-On Delay Time | 33 ns |
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| Subcategory | MOSFETs |
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| Unit Weight | 0.012346 oz |
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| Tradename | HiPerFET |
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